FIB – Focused Ion Beam

Contact

Photo of Prof. Dr. rer. nat. Thomas E. Weirich © Copyright: T. Weirich

Name

Thomas Weirich

Division Manager FIB and TEM

Phone

work
+49 241 80 24349

Email

E-Mail
 

Focused ion beam technology

In microscopy with focused ion beams, FIB, charged and accelerated atoms, namely ions, are directed at the sample instead of electrons.

Normally, gallium Ga+ ions, atomic number 31, are used for this purpose because, in addition to generating secondary electrons, they can also remove material from the sample in a controlled and effective manner.

Areas of application

This method is therefore often used to expose certain areas below the surface for further analysis or to specifically produce electron-transparent lamellae from material areas of interest for a TEM investigation.

Application Note

NOx emission control: UNDERSTANDING PERFORMANCE REQUIRES INSIGHTS AT THE NANOMETER LEVEL

An interactive 360 degree view of the FIB is available here

  View of our Focused Ion Beam Copyright: © A. Herwartz FIB - Focused Ion Beam Strata FIB 400

Dual Beam FIB:

FIB Strata 400

FEI, now Thermo-Fischer Company

Built:

2010, installed in GFE: May 2018

Ion source:

Ga Liquid Metal Ion Source - LMIS

I - Accelerating voltage:

0.5-30 kV

Ion beam current:

1.5pA-20nA

Electron source:

FEG (field emission gun)

E - Acceleration voltage:

1-30kV

Electron beam current:

5pA -24nA

SE Image - Detectors:

TLD :Through-lens detector

CDEM : Channel Detection Electron Multiplier

ETD: Everhart-Thornley Detector

GIS, Gas Injection System:

Pt- (C9H16Pt) and C- (Carbon) containing gas

Micromanipulator:

AutoProbe 200

Omniprobe, now Oxford Company

 
 
 

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