FIB – Focused Ion Beam
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Focused ion beam technology
In microscopy with focused ion beams, FIB, charged and accelerated atoms, namely ions, are directed at the sample instead of electrons.
Normally, gallium Ga+ ions, atomic number 31, are used for this purpose because, in addition to generating secondary electrons, they can also remove material from the sample in a controlled and effective manner.
Areas of application
This method is therefore often used to expose certain areas below the surface for further analysis or to specifically produce electron-transparent lamellae from material areas of interest for a TEM investigation.
Application Note
NOx emission control: UNDERSTANDING PERFORMANCE REQUIRES INSIGHTS AT THE NANOMETER LEVEL
An interactive 360 degree view of the FIB is available here
Dual Beam FIB: |
FIB Strata 400 FEI, now Thermo-Fischer Company |
Built: |
2010, installed in GFE: May 2018 |
Ion source: |
Ga Liquid Metal Ion Source - LMIS |
I - Accelerating voltage: |
0.5-30 kV
|
Ion beam current: |
1.5pA-20nA
|
Electron source: |
FEG (field emission gun)
|
E - Acceleration voltage: |
1-30kV
|
Electron beam current: |
5pA -24nA
|
SE Image - Detectors: |
TLD :Through-lens detector CDEM : Channel Detection Electron Multiplier ETD: Everhart-Thornley Detector |
GIS, Gas Injection System: |
Pt- (C9H16Pt) and C- (Carbon) containing gas |
Micromanipulator: |
AutoProbe 200 Omniprobe, now Oxford Company |
View into the FIB sample chamber
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