(S)TEM – (Scanning-) Transmission Electron Microscopy

Contact

Photo of Prof. Dr. rer. nat. Thomas E. Weirich © Copyright: T. Weirich

Name

Thomas Weirich

Division Manager FIB and TEM

Phone

work
+49 241 80 24349

Email

E-Mail
 

Transmission electron microscopy is used to irradiate, image, diffract and analyze solids with electrons.

This method is particularly suitable for imaging crystal defects and finest structures down to atomic resolution and elemental analysis with EDX and EELS.

Applications

  • Imaging and analysis of ultrafine particles ( > 1 nm)
  • Mapping and analysis of crystal defects such as dislocations, stacking faults, grain and subgrain boundaries
  • Structure of phase interfaces, especially thin films and multiphase structures
  • Proof of crystallinity, crystal structure and crystal orientation
  • Chemical composition of phases and phase mixtures with a local resolution of a few nanometers

Application Notes

Development of novel NOx storage materials: 4D SCANNING ELECTRON NANO-BEAM DIFFRACTION AS A TOOL FOR RELIABLE IDENTIFICATION OF ULTRA-SMALL VOLUMES

NOx emission control: UNDERSTANDING PERFORMANCE REQUIRES INSIGHTS AT THE NANOMETER LEVEL

 

JEOL – JEM F200

View of the TEM JEOL – JEM F200 Copyright: © A. Herwartz

Electron emitter

Schottky Field Emission

Accelerating voltage

200 kV (80 kV)

Point resolution

0,23 nm

Line resolution

0.1 nm

DF-STEM resolution

0.14 nm

Energy resolution

≤ 0,8 eV

Tilt range

α / β max ± 80° (Tomo) / max. ± 31°

EDX-System

OXFORD AZtecEnergy TEM Advanced EDX 100mm²

You can see an interactive 360 degree view of the TEM Jeol-JEM F200 here

 
 

FEI – Tecnai G² F20 S-TWIN

View of the TEM FEI – Tecnai G² F20 S-TWIN Copyright: © A. Herwartz

Electron emitter

Schottky Field Emission

Accelerating voltage

200 kV

Point resolution

0,24 nm

Information Limit

0.15 nm

STEM resolution

0.2 nm

Post-column GATAN energy filter

Energy resolution

0,7 eV

Tilt range

α / β ± 70° (Tomo) / ± 25°

EDX-System

EDAX

 
 

Zeiss Libra 200 FE

View of the TEM Zeiss Libra 200 FE Copyright: © A. Herwartz

Electron emitter

Schottky Field Emission

Accelerating voltage

200 kV

Point resolution

0,29 nm

Information Limit

0.19 nm

STEM resolution

0.45 nm

In-column Corrected OMEGA filter Energy resolution

≤ 0,7 eV

Tilt range

α / β ± 70° / ± 30°

EDX-System

BRUKER AXS QUANTAX XFlash 5030

 
 

Analytical and Imaging Methods

Analytical and imaging methods

JEOL

JEM F200

FEI

Tecnai F20

Zeiss

LIBRA 200 FE

TEM Bright-field Imaging

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TEM Dark-field Imaging

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High-resolution TEM - HRTEM

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Selected Area Electron Diffraction - SAED

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EDX point analysis

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EDX line profile

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Electron Energy-loss Spectroscopy - EELS

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Energy-filtering TEM / Electron Spectroscopic Imaging - ESI

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STEM Bright-field imaging

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STEM Annular dark-field imaging - ADF

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Nano-beam Electron Diffraction - NBED

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Convergent Beam Electron Diffraction - CBED

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